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IS42S32200C1-7BL vs K4S64323LF-DN1H feature comparison

IS42S32200C1-7BL Integrated Silicon Solution Inc

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K4S64323LF-DN1H Samsung Semiconductor

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC SAMSUNG SEMICONDUCTOR INC
Part Package Code BGA BGA
Package Description TFBGA, BGA90,9X15,32 LFBGA, BGA90,9X15,32
Pin Count 90 90
Reach Compliance Code compliant compliant
ECCN Code EAR99 EAR99
HTS Code 8542.32.00.02 8542.32.00.02
Access Mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Access Time-Max 5.5 ns 7 ns
Additional Feature AUTO/SELF REFRESH AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 143 MHz 100 MHz
I/O Type COMMON COMMON
Interleaved Burst Length 1,2,4,8 1,2,4,8
JESD-30 Code R-PBGA-B90 R-PBGA-B90
JESD-609 Code e1
Length 13 mm 13 mm
Memory Density 67108864 bit 67108864 bit
Memory IC Type SYNCHRONOUS DRAM SYNCHRONOUS DRAM
Memory Width 32 32
Moisture Sensitivity Level 3 3
Number of Functions 1 1
Number of Ports 1 1
Number of Terminals 90 90
Number of Words 2097152 words 2097152 words
Number of Words Code 2000000 2000000
Operating Mode SYNCHRONOUS SYNCHRONOUS
Operating Temperature-Max 70 °C 85 °C
Operating Temperature-Min -25 °C
Organization 2MX32 2MX32
Output Characteristics 3-STATE 3-STATE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code TFBGA LFBGA
Package Equivalence Code BGA90,9X15,32 BGA90,9X15,32
Package Shape RECTANGULAR RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260 260
Qualification Status Not Qualified Not Qualified
Refresh Cycles 4096 4096
Seated Height-Max 1.2 mm 1.4 mm
Self Refresh YES YES
Sequential Burst Length 1,2,4,8,FP 1,2,4,8,FP
Standby Current-Max 0.002 A 0.0005 A
Supply Current-Max 0.18 mA 0.11 mA
Supply Voltage-Max (Vsup) 3.6 V 2.7 V
Supply Voltage-Min (Vsup) 3 V 2.3 V
Supply Voltage-Nom (Vsup) 3.3 V 2.5 V
Surface Mount YES YES
Technology CMOS CMOS
Temperature Grade COMMERCIAL OTHER
Terminal Finish TIN SILVER COPPER
Terminal Form BALL BALL
Terminal Pitch 0.8 mm 0.8 mm
Terminal Position BOTTOM BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 8 mm 11 mm
Base Number Matches 1 1
Memory » DRAMs
Memory » DRAMs

Compare IS42S32200C1-7BL with alternatives

Compare K4S64323LF-DN1H with alternatives