IS42S16160J-7BI
vs
K4S561632D-NC7C0
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INTEGRATED SILICON SOLUTION INC
|
SAMSUNG SEMICONDUCTOR INC
|
| Package Description |
TFBGA,
|
SOP,
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8542.32.00.24
|
8542.32.00.24
|
| Access Mode |
FOUR BANK PAGE BURST
|
FOUR BANK PAGE BURST
|
| Access Time-Max |
5.4 ns
|
5.4 ns
|
| Additional Feature |
PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH
|
AUTO/SELF REFRESH
|
| JESD-30 Code |
S-PBGA-B54
|
R-PDSO-G54
|
| Length |
8 mm
|
|
| Memory Density |
268435456 bit
|
268435456 bit
|
| Memory IC Type |
SYNCHRONOUS DRAM
|
SYNCHRONOUS DRAM
|
| Memory Width |
16
|
16
|
| Number of Functions |
1
|
1
|
| Number of Ports |
1
|
1
|
| Number of Terminals |
54
|
54
|
| Number of Words |
16777216 words
|
16777216 words
|
| Number of Words Code |
16000000
|
16000000
|
| Operating Mode |
SYNCHRONOUS
|
SYNCHRONOUS
|
| Operating Temperature-Max |
85 °C
|
70 °C
|
| Operating Temperature-Min |
-40 °C
|
|
| Organization |
16MX16
|
16MX16
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Code |
TFBGA
|
SOP
|
| Package Shape |
SQUARE
|
RECTANGULAR
|
| Package Style |
GRID ARRAY, THIN PROFILE, FINE PITCH
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Seated Height-Max |
1.2 mm
|
|
| Self Refresh |
YES
|
YES
|
| Supply Voltage-Max (Vsup) |
3.6 V
|
3.6 V
|
| Supply Voltage-Min (Vsup) |
3 V
|
3 V
|
| Supply Voltage-Nom (Vsup) |
3.3 V
|
3.3 V
|
| Surface Mount |
YES
|
YES
|
| Technology |
CMOS
|
CMOS
|
| Temperature Grade |
INDUSTRIAL
|
COMMERCIAL
|
| Terminal Form |
BALL
|
GULL WING
|
| Terminal Pitch |
0.8 mm
|
|
| Terminal Position |
BOTTOM
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Width |
8 mm
|
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare IS42S16160J-7BI with alternatives
Compare K4S561632D-NC7C0 with alternatives