IRLZ24N
vs
HUF75329D3S_NL
feature comparison
All Stats
Differences Only
Rohs Code
No
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
ROCHESTER ELECTRONICS LLC
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Avalanche Energy Rating (Eas)
68 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
55 V
Drain Current-Max (ID)
18 A
20 A
Drain-source On Resistance-Max
0.075 Ω
0.026 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
TO-252AA
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
45 W
Power Dissipation-Max (Abs)
45 W
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
NO
YES
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
2
Pbfree Code
Yes
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRLZ24N with alternatives
Compare HUF75329D3S_NL with alternatives