IRLU4343-701TRRPBF
vs
NDB5060S62Z
feature comparison
Rohs Code |
Yes
|
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
FAIRCHILD SEMICONDUCTOR CORP
|
Package Description |
SMALL OUTLINE, R-PSSO-G3
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas) |
160 mJ
|
100 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
60 V
|
Drain Current-Max (ID) |
26 A
|
26 A
|
Drain-source On Resistance-Max |
0.05 Ω
|
0.05 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G3
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
175 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
80 A
|
78 A
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
Transistor Application |
AMPLIFIER
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
JEDEC-95 Code |
|
TO-263AB
|
Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRLU4343-701TRRPBF with alternatives
Compare NDB5060S62Z with alternatives