IRLU120
vs
SIHLU120-GE3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
End Of Life
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
VISHAY SILICONIX
Part Package Code
TO-251AA
TO-251
Package Description
IN-LINE, R-PSIP-T3
IN-LINE, R-PSIP-T3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
AVALANCHE RATED
Avalanche Energy Rating (Eas)
210 mJ
210 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
7.7 A
7.7 A
Drain-source On Resistance-Max
0.27 Ω
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-251AA
TO-251
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e0
e3
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
42 W
Pulsed Drain Current-Max (IDM)
31 A
31 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
MATTE TIN
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
5
1
Pbfree Code
Case Connection
DRAIN
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30