IRLR230A
vs
FQD4N20TM
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
ONSEMI
Package Description
SMALL OUTLINE, R-PSSO-G2
DPAK-3
Pin Count
3
Reach Compliance Code
unknown
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
37 mJ
52 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
7.5 A
3 A
Drain-source On Resistance-Max
0.4 Ω
1.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
48 W
30 W
Pulsed Drain Current-Max (IDM)
26 A
12 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
3
Pbfree Code
Part Package Code
DPAK-3 / TO-252-3
Manufacturer Package Code
369AS
Factory Lead Time
2 Days
Samacsys Manufacturer
onsemi
JEDEC-95 Code
TO-252
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Compare IRLR230A with alternatives
Compare FQD4N20TM with alternatives