IRLR230A
vs
FQD4N20TM
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
ROCHESTER ELECTRONICS LLC
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
DPAK-3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
|
Avalanche Energy Rating (Eas) |
37 mJ
|
52 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
7.5 A
|
3 A
|
Drain-source On Resistance-Max |
0.4 Ω
|
1.4 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation-Max (Abs) |
48 W
|
|
Pulsed Drain Current-Max (IDM) |
26 A
|
12 A
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
3
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-252
|
JEDEC-95 Code |
|
TO-252
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Peak Reflow Temperature (Cel) |
|
260
|
Terminal Finish |
|
MATTE TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRLR230A with alternatives
Compare FQD4N20TM with alternatives