IRLR120ATF vs IRLR120ATM feature comparison

IRLR120ATF Fairchild Semiconductor Corporation

Buy Now Datasheet

IRLR120ATM Fairchild Semiconductor Corporation

Buy Now Datasheet
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252 TO-252
Package Description DPAK-3 DPAK-3
Pin Count 3 3
Reach Compliance Code not_compliant not_compliant
ECCN Code EAR99 EAR99
Avalanche Energy Rating (Eas) 94 mJ 94 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V 100 V
Drain Current-Max (ID) 8.4 A 8.4 A
Drain-source On Resistance-Max 0.22 Ω 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 42 W 42 W
Pulsed Drain Current-Max (IDM) 29 A 29 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) MATTE TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 1

Compare IRLR120ATF with alternatives

Compare IRLR120ATM with alternatives