IRLMS1902PBF vs IRF9956 feature comparison

IRLMS1902PBF Infineon Technologies AG

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IRF9956 Infineon Technologies AG

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Rohs Code Yes No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG INFINEON TECHNOLOGIES AG
Package Description LEAD FREE, MICRO-6 SO-8
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Additional Feature HIGH RELIABILITY AVALANCHE RATED, HIGH RELIABILITY
Configuration SINGLE WITH BUILT-IN DIODE SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 30 V
Drain Current-Max (ID) 3.2 A 3.5 A
Drain-source On Resistance-Max 0.1 Ω 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6 R-PDSO-G8
JESD-609 Code e3 e0
Moisture Sensitivity Level 1 1
Number of Elements 1 2
Number of Terminals 6 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 0.78 W
Pulsed Drain Current-Max (IDM) 18 A 16 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN Tin/Lead (Sn/Pb)
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 44 mJ
JEDEC-95 Code MS-012AA

Compare IRLMS1902PBF with alternatives

Compare IRF9956 with alternatives