IRL640SPBF
vs
SIHL640STRL-GE3
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Active
Ihs Manufacturer
VISHAY SILICONIX
VISHAY SILICONIX
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
580 mJ
580 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
17 A
17 A
Drain-source On Resistance-Max
0.18 Ω
0.18 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
260
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
68 A
68 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
40
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
3
2
Power Dissipation-Max (Abs)
125 W
Compare IRL640SPBF with alternatives
Compare SIHL640STRL-GE3 with alternatives