IRL5NJ024SCV
vs
IRFZ24NPBF
feature comparison
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
NXP SEMICONDUCTORS
|
Package Description |
HERMETIC SEALED, SMD0.5, 3 PIN
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
AVALANCHE RATED
|
ESD PROTECTED
|
Avalanche Energy Rating (Eas) |
56 mJ
|
30 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
55 V
|
55 V
|
Drain Current-Max (ID) |
17 A
|
17 A
|
Drain-source On Resistance-Max |
0.075 Ω
|
0.07 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-PSFM-T3
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
68 A
|
68 A
|
Surface Mount |
YES
|
NO
|
Terminal Form |
NO LEAD
|
THROUGH-HOLE
|
Terminal Position |
BOTTOM
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
3
|
JEDEC-95 Code |
|
TO-220AB
|
|
|
|
Compare IRL5NJ024SCV with alternatives
Compare IRFZ24NPBF with alternatives