IRHY93130CM
vs
JANSF2N7382
feature comparison
| Rohs Code |
No
|
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
DEFENSE LOGISTICS AGENCY
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
HIGH RELIABILITY, RADIATION HARDENED
|
RADIATION HARDENED, HIGH RELIABILITY
|
| Avalanche Energy Rating (Eas) |
150 mJ
|
150 mJ
|
| Case Connection |
ISOLATED
|
ISOLATED
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
11 A
|
11 A
|
| Drain-source On Resistance-Max |
0.35 Ω
|
0.35 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-257AA
|
TO-257AA
|
| JESD-30 Code |
R-MSFM-P3
|
R-MSFM-P3
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation-Max (Abs) |
75 W
|
|
| Pulsed Drain Current-Max (IDM) |
44 A
|
44 A
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
TIN LEAD
|
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
4
|
| Package Description |
|
TO-257AA, 3 PIN
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Reference Standard |
|
MIL-19500/615
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRHY93130CM with alternatives
Compare JANSF2N7382 with alternatives