IRHM8160
vs
JANSH2N7432
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
FLANGE MOUNT, R-CSFM-T3
FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code
not_compliant
not_compliant
ECCN Code
EAR99
3A001.A.1.A
Additional Feature
RADIATION HARDENED
Avalanche Energy Rating (Eas)
500 mJ
500 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
35 A
35 A
Drain-source On Resistance-Max
0.045 Ω
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-254AA
JESD-30 Code
R-CSFM-T3
S-MSFM-P3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
METAL
Package Shape
RECTANGULAR
SQUARE
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
250 W
3 W
Pulsed Drain Current-Max (IDM)
201 A
201 A
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
PIN/PEG
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
2
Compare IRHM8160 with alternatives
Compare JANSH2N7432 with alternatives