IRGP20B120U-E vs HGTP15N50C1 feature comparison

IRGP20B120U-E Infineon Technologies AG

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HGTP15N50C1 Harris Semiconductor

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG HARRIS SEMICONDUCTOR
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Case Connection ISOLATED COLLECTOR
Collector Current-Max (IC) 40 A 15 A
Collector-Emitter Voltage-Max 1200 V 500 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-247AD TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 228 ns
Turn-on Time-Nom (ton) 70 ns
Base Number Matches 4 1
HTS Code 8541.29.00.95
Fall Time-Max (tf) 500 ns
Gate-Emitter Thr Voltage-Max 4.5 V
Gate-Emitter Voltage-Max 20 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation Ambient-Max 75 W
Power Dissipation-Max (Abs) 75 W
Rise Time-Max (tr) 50 ns
Terminal Finish TIN LEAD
Turn-off Time-Max (toff) 400 ns
Turn-on Time-Max (ton) 50 ns
VCEsat-Max 3.2 V

Compare IRGP20B120U-E with alternatives

Compare HGTP15N50C1 with alternatives