IRGBC30FD2
vs
HGTP6N50E1D
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Transferred
|
Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
HARRIS SEMICONDUCTOR
|
Part Package Code |
TO-220AB
|
|
Package Description |
TO-220AB, 3 PIN
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count |
3
|
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
HTS Code |
8541.29.00.95
|
8541.29.00.95
|
Additional Feature |
FAST
|
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
31 A
|
7.5 A
|
Collector-Emitter Voltage-Max |
600 V
|
500 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
Gate-Emitter Thr Voltage-Max |
5.5 V
|
4.5 V
|
Gate-Emitter Voltage-Max |
20 V
|
20 V
|
JEDEC-95 Code |
TO-220AB
|
TO-220AB
|
JESD-30 Code |
R-PSFM-T3
|
R-PSFM-T3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Power Dissipation Ambient-Max |
100 W
|
75 W
|
Power Dissipation-Max (Abs) |
100 W
|
75 W
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
POWER CONTROL
|
MOTOR CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
900 ns
|
24 ns
|
Turn-on Time-Nom (ton) |
145 ns
|
90 ns
|
VCEsat-Max |
2.1 V
|
2.4 V
|
Base Number Matches |
1
|
4
|
|
|
|
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