IRG4PF50WDPBF
vs
SGB15N60
feature comparison
All Stats
Differences Only
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Transferred
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SIEMENS A G
Package Description
FLANGE MOUNT, R-PSFM-T3
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
LOW CONDUCTION LOSS
LOW CONDUCTION LOSS, FAST
Case Connection
COLLECTOR
COLLECTOR
Collector Current-Max (IC)
51 A
31 A
Collector-Emitter Voltage-Max
900 V
600 V
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
Gate-Emitter Thr Voltage-Max
6 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-247AC
TO-263AB
JESD-30 Code
R-PSFM-T3
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
1
Number of Terminals
3
2
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
200 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
POWER CONTROL
MOTOR CONTROL
Transistor Element Material
SILICON
SILICON
Turn-off Time-Nom (toff)
460 ns
315 ns
Turn-on Time-Nom (ton)
121 ns
53 ns
Base Number Matches
2
3
Compare IRG4PF50WDPBF with alternatives
Compare SGB15N60 with alternatives