IRG4PF50WDPBF vs SGB15N60 feature comparison

IRG4PF50WDPBF Infineon Technologies AG

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SGB15N60 Siemens

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Rohs Code Yes
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG SIEMENS A G
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS LOW CONDUCTION LOSS, FAST
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 51 A 31 A
Collector-Emitter Voltage-Max 900 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AC TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 200 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 460 ns 315 ns
Turn-on Time-Nom (ton) 121 ns 53 ns
Base Number Matches 2 3

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