IRG4PC50KPBF vs GT50J102 feature comparison

IRG4PC50KPBF Infineon Technologies AG

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GT50J102 Toshiba America Electronic Components

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG TOSHIBA CORP
Package Description LEAD FREE, PLASTIC PACKAGE-3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant unknown
ECCN Code EAR99 EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer Infineon
Additional Feature LOW CONDUCTION LOSS HIGH SPEED
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 52 A 50 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 120 ns 300 ns
Gate-Emitter Thr Voltage-Max 6 V 8 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 R-PSFM-T3
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 3
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 200 W 200 W
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 430 ns 500 ns
Turn-on Time-Nom (ton) 72 ns 400 ns
Base Number Matches 1 1
Pbfree Code No
HTS Code 8541.29.00.95
Peak Reflow Temperature (Cel) 240
Power Dissipation Ambient-Max 200 W
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
VCEsat-Max 2.7 V

Compare IRG4PC50KPBF with alternatives

Compare GT50J102 with alternatives