IRG4IBC20KD
vs
APT35GN120SG
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
MICROCHIP TECHNOLOGY INC
|
| Package Description |
TO-220, FULL PACK-3
|
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Samacsys Manufacturer |
Infineon
|
|
| Additional Feature |
ULTRA FAST SOFT RECOVERY
|
|
| Case Connection |
ISOLATED
|
|
| Collector Current-Max (IC) |
11.5 A
|
94 A
|
| Collector-Emitter Voltage-Max |
600 V
|
1200 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
|
| JEDEC-95 Code |
TO-220AB
|
|
| JESD-30 Code |
R-PSFM-T3
|
|
| Number of Elements |
1
|
|
| Number of Terminals |
3
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
FLANGE MOUNT
|
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Qualification Status |
Not Qualified
|
|
| Surface Mount |
NO
|
YES
|
| Terminal Form |
THROUGH-HOLE
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
|
| Transistor Application |
MOTOR CONTROL
|
|
| Transistor Element Material |
SILICON
|
|
| Turn-off Time-Nom (toff) |
380 ns
|
|
| Turn-on Time-Nom (ton) |
88 ns
|
|
| Base Number Matches |
2
|
2
|
| Factory Lead Time |
|
28 Weeks
|
| Gate-Emitter Thr Voltage-Max |
|
6.5 V
|
| Gate-Emitter Voltage-Max |
|
30 V
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
379 W
|
|
|
|
Compare IRG4IBC20KD with alternatives
Compare APT35GN120SG with alternatives