IRG4BC30UDPBF vs HGT1S7N60B3DS feature comparison

IRG4BC30UDPBF International Rectifier

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HGT1S7N60B3DS onsemi

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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred Active
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP ON SEMICONDUCTOR
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 23 A 14 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 130 ns 175 ns
Gate-Emitter Thr Voltage-Max 6 V 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JEDEC-95 Code TO-220AB TO-263AB
JESD-30 Code R-PSFM-T3 R-PSSO-G2
JESD-609 Code e3
Number of Elements 1 1
Number of Terminals 3 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT SMALL OUTLINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 100 W 60 W
Qualification Status Not Qualified
Surface Mount NO YES
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE GULL WING
Terminal Position SINGLE SINGLE
Transistor Application POWER CONTROL POWER CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 300 ns 350 ns
Turn-on Time-Nom (ton) 62 ns 46 ns
Base Number Matches 2 5
Operating Temperature-Min -55 °C
Turn-off Time-Max (toff) 470 ns
VCEsat-Max 2.1 V

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