IRG4BC30S vs HGTP12N60D1 feature comparison

IRG4BC30S Infineon Technologies AG

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HGTP12N60D1 Intersil Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer INFINEON TECHNOLOGIES AG INTERSIL CORP
Package Description TO-220AB, 3 PIN
Reach Compliance Code compliant not_compliant
ECCN Code EAR99 EAR99
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 34 A 21 A
Collector-Emitter Voltage-Max 600 V 600 V
Configuration SINGLE SINGLE
JEDEC-95 Code TO-220AB TO-220AB
JESD-30 Code R-PSFM-T3 R-PSFM-T3
Number of Elements 1 1
Number of Terminals 3 3
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 1550 ns 430 ns
Turn-on Time-Nom (ton) 40 ns 100 ns
Base Number Matches 1 3
Fall Time-Max (tf) 600 ns
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 25 V
JESD-609 Code e0
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 75 W
Terminal Finish Tin/Lead (Sn/Pb)

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