IRG4BC30FD-S
vs
IRG4BC30FD-STRRPBF
feature comparison
Rohs Code |
No
|
Yes
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
PLASTIC, D2PAK-3
|
LEAD FREE, PLASTIC, D2PAK-3
|
Reach Compliance Code |
not_compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Case Connection |
COLLECTOR
|
COLLECTOR
|
Collector Current-Max (IC) |
31 A
|
31 A
|
Collector-Emitter Voltage-Max |
600 V
|
600 V
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
JESD-609 Code |
e0
|
e3
|
Moisture Sensitivity Level |
1
|
1
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel) |
225
|
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
MATTE TIN OVER NICKEL
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s) |
30
|
|
Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
Transistor Element Material |
SILICON
|
SILICON
|
Turn-off Time-Nom (toff) |
620 ns
|
620 ns
|
Turn-on Time-Nom (ton) |
69 ns
|
69 ns
|
Base Number Matches |
2
|
2
|
Fall Time-Max (tf) |
|
230 ns
|
Gate-Emitter Thr Voltage-Max |
|
6 V
|
Gate-Emitter Voltage-Max |
|
20 V
|
Operating Temperature-Max |
|
150 °C
|
Power Dissipation-Max (Abs) |
|
100 W
|
|
|
|
Compare IRG4BC30FD-S with alternatives
Compare IRG4BC30FD-STRRPBF with alternatives