IRG4BC15UD-SPBF
vs
HGTG11N120CND
feature comparison
| Pbfree Code |
Yes
|
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
INTERNATIONAL RECTIFIER CORP
|
HARRIS SEMICONDUCTOR
|
| Part Package Code |
D2PAK
|
|
| Package Description |
LEAD FREE, PLASTIC, D2PAK-3
|
|
| Pin Count |
3
|
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
14 A
|
11 A
|
| Collector-Emitter Voltage-Max |
600 V
|
1200 V
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| Gate-Emitter Thr Voltage-Max |
6 V
|
|
| Gate-Emitter Voltage-Max |
20 V
|
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSFM-T3
|
| JESD-609 Code |
e3
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
3
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
19 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Finish |
Matte Tin (Sn) - with Nickel (Ni) barrier
|
|
| Terminal Form |
GULL WING
|
THROUGH-HOLE
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
|
| Transistor Application |
POWER CONTROL
|
POWER CONTROL
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Nom (toff) |
400 ns
|
|
| Turn-on Time-Nom (ton) |
37 ns
|
|
| Base Number Matches |
2
|
5
|
| Additional Feature |
|
LOW CONDUCTION LOSS
|
| JEDEC-95 Code |
|
TO-247
|
|
|
|
Compare IRG4BC15UD-SPBF with alternatives