IRG4BC15UD-SPBF vs HGT1S5N120BNS9A feature comparison

IRG4BC15UD-SPBF Infineon Technologies AG

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HGT1S5N120BNS9A Fairchild Semiconductor Corporation

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Rohs Code Yes No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description LEAD FREE, PLASTIC, D2PAK-3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 14 A 21 A
Collector-Emitter Voltage-Max 600 V 1200 V
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V 20 V
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 19 W 167 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish MATTE TIN OVER NICKEL TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application POWER CONTROL MOTOR CONTROL
Transistor Element Material SILICON SILICON
Turn-off Time-Nom (toff) 400 ns 357 ns
Turn-on Time-Nom (ton) 37 ns 35 ns
Base Number Matches 2 2
Additional Feature LOW CONDUCTION LOSS, AVALANCHE RATED
Fall Time-Max (tf) 200 ns
JEDEC-95 Code TO-263AB
Rise Time-Max (tr) 20 ns

Compare IRG4BC15UD-SPBF with alternatives

Compare HGT1S5N120BNS9A with alternatives