IRFZ44ZS
vs
RFD16N06LESM
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Obsolete
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
HARRIS SEMICONDUCTOR
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
MEGAFET, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
86 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
55 V
60 V
Drain Current-Max (ID)
51 A
16 A
Drain-source On Resistance-Max
0.0139 Ω
0.047 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
JESD-609 Code
e0
e0
Moisture Sensitivity Level
1
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
175 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
80 W
90 W
Pulsed Drain Current-Max (IDM)
200 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
HTS Code
8541.29.00.95
JEDEC-95 Code
TO-252AA
Power Dissipation Ambient-Max
90 W
Turn-off Time-Max (toff)
115 ns
Turn-on Time-Max (ton)
100 ns
Compare IRFZ44ZS with alternatives
Compare RFD16N06LESM with alternatives