IRFZ44N vs STP55NE06 feature comparison

IRFZ44N Philips Semiconductors

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STP55NE06 STMicroelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Transferred Obsolete
Ihs Manufacturer PHILIPS SEMICONDUCTORS STMICROELECTRONICS
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID) 49 A 55 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3 e3
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 175 °C 175 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 110 W 130 W
Surface Mount NO NO
Terminal Finish Matte Tin (Sn) MATTE TIN
Base Number Matches 6 1
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 200 mJ
DS Breakdown Voltage-Min 60 V
Drain-source On Resistance-Max 0.022 Ω
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Pulsed Drain Current-Max (IDM) 220 A
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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