IRFY9130M
vs
IRFY9130MEBPBF
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
TT ELECTRONICS PLC
|
INFINEON TECHNOLOGIES AG
|
| Package Description |
FLANGE MOUNT, S-MSFM-P3
|
FLANGE MOUNT, S-MSFM-P3
|
| Reach Compliance Code |
compliant
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Case Connection |
SOURCE
|
ISOLATED
|
| Configuration |
SINGLE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
11.2 A
|
9.3 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
0.36 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JEDEC-95 Code |
TO-257AB
|
TO-257AB
|
| JESD-30 Code |
S-MSFM-P3
|
S-MSFM-P3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
METAL
|
METAL
|
| Package Shape |
SQUARE
|
SQUARE
|
| Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
PIN/PEG
|
PIN/PEG
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
3
|
2
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Pulsed Drain Current-Max (IDM) |
|
37 A
|
| Reference Standard |
|
CECC
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFY9130M with alternatives
Compare IRFY9130MEBPBF with alternatives