IRFY9130
vs
IRFY9130MED
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Obsolete
|
Obsolete
|
Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
INFINEON TECHNOLOGIES AG
|
Package Description |
HERMETIC SEALED, TO-257AA, 3 PIN
|
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Additional Feature |
HIGH RELIABILITY
|
|
Avalanche Energy Rating (Eas) |
400 mJ
|
|
Case Connection |
ISOLATED
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
11.2 A
|
9.3 A
|
Drain-source On Resistance-Max |
0.3 Ω
|
0.36 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-257AA
|
TO-257AB
|
JESD-30 Code |
S-XSFM-P3
|
S-MSFM-P3
|
JESD-609 Code |
e0
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
UNSPECIFIED
|
METAL
|
Package Shape |
SQUARE
|
SQUARE
|
Package Style |
FLANGE MOUNT
|
FLANGE MOUNT
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
44 A
|
37 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
TIN LEAD
|
|
Terminal Form |
PIN/PEG
|
PIN/PEG
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
4
|
2
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Reference Standard |
|
CECC
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRFY9130 with alternatives
Compare IRFY9130MED with alternatives