IRFU420 vs IRFU420 feature comparison

IRFU420 Vishay Siliconix

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IRFU420 Samsung Semiconductor

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Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete Transferred
Ihs Manufacturer VISHAY SILICONIX SAMSUNG SEMICONDUCTOR INC
Part Package Code TO-251
Package Description IPAK-3 IPAK-3
Pin Count 3 3
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 400 mJ 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE
DS Breakdown Voltage-Min 500 V 500 V
Drain Current-Max (ID) 2.4 A 2.5 A
Drain-source On Resistance-Max 3 Ω 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251
JESD-30 Code R-PSIP-T3 R-PSIP-T3
JESD-609 Code e0
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A 8 A
Qualification Status Not Qualified Not Qualified
Surface Mount NO NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 3 2
HTS Code 8541.29.00.95
Power Dissipation Ambient-Max 42 W
Power Dissipation-Max (Abs) 42 W
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 33 ns

Compare IRFU420 with alternatives

Compare IRFU420 with alternatives