IRFU222
vs
IRFU221
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
HARRIS SEMICONDUCTOR
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
3.8 A
4.6 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e0
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
50 W
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Base Number Matches
7
4
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
85 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
150 V
Drain-source On Resistance-Max
0.8 Ω
JEDEC-95 Code
TO-251AA
JESD-30 Code
R-PSIP-T3
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Power Dissipation Ambient-Max
50 W
Pulsed Drain Current-Max (IDM)
18 A
Qualification Status
Not Qualified
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
53 ns
Turn-on Time-Max (ton)
54 ns
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