IRFU120
vs
SIHFU120-E3
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
VISHAY SILICONIX
Package Description
IN-LINE, R-PSIP-T3
IN-LINE, R-PSIP-T3
Pin Count
3
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
30 mJ
210 mJ
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
8.4 A
7.7 A
Drain-source On Resistance-Max
0.27 Ω
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation Ambient-Max
42 W
Power Dissipation-Max (Abs)
42 W
42 W
Pulsed Drain Current-Max (IDM)
34 A
31 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
59 ns
Turn-on Time-Max (ton)
58 ns
Base Number Matches
7
1
Pbfree Code
Rohs Code
Part Package Code
TO-251AA
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
JEDEC-95 Code
TO-251AA
JESD-609 Code
e3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Terminal Finish
MATTE TIN
Time@Peak Reflow Temperature-Max (s)
30
Compare IRFU120 with alternatives
Compare SIHFU120-E3 with alternatives