IRFSL11N50A
vs
IRFSL9N60APBF
feature comparison
All Stats
Differences Only
Pbfree Code
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-262AA
TO-262AA
Package Description
IN-LINE, R-PSIP-T3
IN-LINE, R-PSIP-T3
Pin Count
3
3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
390 mJ
290 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
500 V
600 V
Drain Current-Max (ID)
11 A
9.2 A
Drain-source On Resistance-Max
0.55 Ω
0.75 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-262AA
TO-262AA
JESD-30 Code
R-PSIP-T3
R-PSIP-T3
JESD-609 Code
e0
e3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
190 W
170 W
Pulsed Drain Current-Max (IDM)
44 A
37 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
MATTE TIN OVER NICKEL
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
3
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Compare IRFSL11N50A with alternatives
Compare IRFSL9N60APBF with alternatives