IRFS31N20DTRRP
vs
FQB34N20TM-AM002
feature comparison
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
End Of Life
|
| Ihs Manufacturer |
INFINEON TECHNOLOGIES AG
|
ONSEMI
|
| Package Description |
SMALL OUTLINE, R-PSSO-G2
|
ROHS COMPLIANT, D2PAK-3
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Avalanche Energy Rating (Eas) |
420 mJ
|
640 mJ
|
| Case Connection |
DRAIN
|
DRAIN
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
200 V
|
200 V
|
| Drain Current-Max (ID) |
31 A
|
31 A
|
| Drain-source On Resistance-Max |
0.082 Ω
|
0.075 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
2
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
| Peak Reflow Temperature (Cel) |
260
|
245
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
124 A
|
124 A
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN OVER NICKEL
|
Matte Tin (Sn) - annealed
|
| Terminal Form |
GULL WING
|
GULL WING
|
| Terminal Position |
SINGLE
|
SINGLE
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
SWITCHING
|
SWITCHING
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| Pbfree Code |
|
Yes
|
| Part Package Code |
|
TO-263 2L (D2PAK)
|
| Manufacturer Package Code |
|
418AJ
|
| Samacsys Manufacturer |
|
onsemi
|
| JEDEC-95 Code |
|
TO-263AB
|
| JESD-609 Code |
|
e3
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
180 W
|
| Qualification Status |
|
Not Qualified
|
|
|
|
Compare IRFS31N20DTRRP with alternatives
Compare FQB34N20TM-AM002 with alternatives