IRFR92209A
vs
IRFR9220TRLPBF
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
HARRIS SEMICONDUCTOR
VISHAY INTERTECHNOLOGY INC
Package Description
SMALL OUTLINE, R-PSSO-G2
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
unknown
compliant
ECCN Code
EAR99
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
AVALANCHE RATED
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
0.6 A
3.6 A
Drain-source On Resistance-Max
1.5 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
TO-252AA
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation Ambient-Max
42 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Turn-off Time-Max (toff)
50 ns
Turn-on Time-Max (ton)
50 ns
Base Number Matches
1
1
Pbfree Code
Rohs Code
Part Package Code
TO-252AA
Pin Count
3
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
310 mJ
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
14 A
Terminal Finish
Pure Matte Tin (Sn) - annealed
Time@Peak Reflow Temperature-Max (s)
30
Compare IRFR92209A with alternatives
Compare IRFR9220TRLPBF with alternatives