IRFR9220
vs
IRFR9220
feature comparison
All Stats
Differences Only
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
ROCHESTER ELECTRONICS LLC
Package Description
DPAK-3
Pin Count
3
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
3.6 A
0.6 A
Drain-source On Resistance-Max
1.5 Ω
1.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
R-PSSO-G2
Number of Elements
1
1
Number of Terminals
2
2
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
SMALL OUTLINE
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
42 W
Qualification Status
Not Qualified
COMMERCIAL
Surface Mount
YES
YES
Terminal Form
GULL WING
GULL WING
Terminal Position
SINGLE
SINGLE
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
1
Pbfree Code
Rohs Code
Additional Feature
AVALANCHE RATED
Case Connection
DRAIN
JEDEC-95 Code
TO-252AA
JESD-609 Code
e0
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Terminal Finish
TIN LEAD
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Compare IRFR9220 with alternatives
Compare IRFR9220 with alternatives