IRFR220-T1
vs
IRFR220TRLPBF
feature comparison
Part Life Cycle Code |
Obsolete
|
Active
|
Ihs Manufacturer |
FAIRCHILD SEMICONDUCTOR CORP
|
VISHAY SILICONIX
|
Package Description |
SMALL OUTLINE, R-PSSO-G2
|
SMALL OUTLINE, R-PSSO-G2
|
Reach Compliance Code |
unknown
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
50 mJ
|
230 mJ
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
4.6 A
|
4.8 A
|
Drain-source On Resistance-Max |
0.8 Ω
|
0.8 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-PSSO-G2
|
R-PSSO-G2
|
Number of Elements |
1
|
1
|
Number of Terminals |
2
|
2
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
SMALL OUTLINE
|
SMALL OUTLINE
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
18 A
|
19 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Form |
GULL WING
|
GULL WING
|
Terminal Position |
SINGLE
|
SINGLE
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
Yes
|
Rohs Code |
|
Yes
|
Part Package Code |
|
TO-252
|
Pin Count |
|
3
|
Samacsys Manufacturer |
|
Vishay
|
Additional Feature |
|
AVALANCHE RATED
|
Case Connection |
|
DRAIN
|
JEDEC-95 Code |
|
TO-252
|
JESD-609 Code |
|
e3
|
Moisture Sensitivity Level |
|
1
|
Operating Temperature-Max |
|
150 °C
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation-Max (Abs) |
|
42 W
|
Terminal Finish |
|
MATTE TIN
|
Time@Peak Reflow Temperature-Max (s) |
|
30
|
|
|
|
Compare IRFR220-T1 with alternatives
Compare IRFR220TRLPBF with alternatives