IRFR1205 vs HUF75307P3 feature comparison

IRFR1205 Infineon Technologies AG

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HUF75307P3 Fairchild Semiconductor Corporation

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Rohs Code No No
Part Life Cycle Code Active Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG FAIRCHILD SEMICONDUCTOR CORP
Package Description PLASTIC, DPAK-3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 20 A 15 A
Drain-source On Resistance-Max 0.027 Ω 0.09 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA TO-220AB
JESD-30 Code R-PSSO-G2 R-PSFM-T3
JESD-609 Code e0 e0
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE FLANGE MOUNT
Peak Reflow Temperature (Cel) 240
Polarity/Channel Type N-CHANNEL N-CHANNEL
Pulsed Drain Current-Max (IDM) 160 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form GULL WING THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 4
Operating Temperature-Max 175 °C
Power Dissipation-Max (Abs) 45 W

Compare IRFR1205 with alternatives

Compare HUF75307P3 with alternatives