IRFR024
vs
SIHFR024T-E3
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Active
Ihs Manufacturer
THOMSON CONSUMER ELECTRONICS
VISHAY SILICONIX
Reach Compliance Code
unknown
unknown
ECCN Code
EAR99
EAR99
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
Drain Current-Max (ID)
15 A
14 A
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-609 Code
e0
e3
Number of Elements
1
1
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
42 W
Surface Mount
YES
YES
Terminal Finish
Tin/Lead (Sn/Pb)
MATTE TIN
Base Number Matches
3
1
Pbfree Code
Part Package Code
TO-252
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Avalanche Energy Rating (Eas)
91 mJ
Case Connection
DRAIN
DS Breakdown Voltage-Min
60 V
Drain-source On Resistance-Max
0.1 Ω
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Moisture Sensitivity Level
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Not Qualified
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Compare SIHFR024T-E3 with alternatives