IRFP9130
vs
IRFF9130-QR-BR1
feature comparison
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
TT ELECTRONICS PLC
|
| Part Package Code |
TO-3P
|
|
| Package Description |
FLANGE MOUNT, R-PSFM-T3
|
CYLINDRICAL, O-MBCY-W3
|
| Pin Count |
2
|
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.95
|
|
| Avalanche Energy Rating (Eas) |
550 mJ
|
|
| Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
12 A
|
6.5 A
|
| Drain-source On Resistance-Max |
0.3 Ω
|
0.3 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-PSFM-T3
|
O-MBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
METAL
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
FLANGE MOUNT
|
CYLINDRICAL
|
| Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
| Power Dissipation Ambient-Max |
75 W
|
|
| Power Dissipation-Max (Abs) |
75 W
|
|
| Pulsed Drain Current-Max (IDM) |
48 A
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
WIRE
|
| Terminal Position |
SINGLE
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Turn-off Time-Max (toff) |
280 ns
|
|
| Turn-on Time-Max (ton) |
200 ns
|
|
| Base Number Matches |
1
|
2
|
| Rohs Code |
|
Yes
|
| JEDEC-95 Code |
|
TO-205AF
|
| JESD-609 Code |
|
e1
|
| Terminal Finish |
|
TIN SILVER COPPER
|
|
|
|
Compare IRFP9130 with alternatives
Compare IRFF9130-QR-BR1 with alternatives