IRFP452 vs 2SK386 feature comparison

IRFP452 Intersil Corporation

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2SK386 Toshiba America Electronic Components

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Rohs Code No No
Part Life Cycle Code Obsolete Obsolete
Ihs Manufacturer INTERSIL CORP TOSHIBA CORP
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
Configuration SINGLE SINGLE
Drain Current-Max (ID) 12 A 10 A
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0 e0
Number of Elements 1 1
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Surface Mount NO NO
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Base Number Matches 12 1
Package Description FLANGE MOUNT, R-PSFM-T3
HTS Code 8541.29.00.95
Case Connection DRAIN
DS Breakdown Voltage-Min 450 V
Drain-source On Resistance-Max 0.7 Ω
JESD-30 Code R-PSFM-T3
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Power Dissipation Ambient-Max 120 W
Qualification Status Not Qualified
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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