IRFP150N
vs
2SK3151
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Obsolete
Not Recommended
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
RENESAS ELECTRONICS CORP
Reach Compliance Code
compliant
unknown
ECCN Code
EAR99
EAR99
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
44 A
50 A
Drain-source On Resistance-Max
0.03 Ω
0.025 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
155 W
125 W
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
TIN LEAD
TIN LEAD
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
4
2
Pbfree Code
Part Package Code
TO-3P
Package Description
TO-3P, 3 PIN
Pin Count
3
Date Of Intro
1998-08-01
Pulsed Drain Current-Max (IDM)
200 A
Compare IRFP150N with alternatives
Compare 2SK3151 with alternatives