IRFN250-JQR-BR4
vs
IRFN250
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
INFINEON TECHNOLOGIES AG
Package Description
UNCASED CHIP, R-XUUC-N3
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
500 mJ
500 mJ
Case Connection
DRAIN
ISOLATED
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
200 V
Drain Current-Max (ID)
22 A
27.4 A
Drain-source On Resistance-Max
0.105 Ω
0.105 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-XUUC-N3
R-CBCC-N3
JESD-609 Code
e4
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
UNSPECIFIED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
UNCASED CHIP
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
88 A
110 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Finish
GOLD
Tin/Lead (Sn/Pb)
Terminal Form
NO LEAD
NO LEAD
Terminal Position
UPPER
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
1
2
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Power Dissipation-Max (Abs)
100 W
Reference Standard
MIL-19500/592
Compare IRFN250-JQR-BR4 with alternatives
Compare IRFN250 with alternatives