IRFN150SMDR4
vs
JANTXV2N7224U
feature comparison
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Obsolete
|
Ihs Manufacturer |
TT ELECTRONICS PLC
|
MICROSEMI CORP
|
Package Description |
CHIP CARRIER, R-CBCC-N3
|
SMD-1, U-PKG-3
|
Reach Compliance Code |
compliant
|
unknown
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
150 mJ
|
150 mJ
|
Case Connection |
DRAIN
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
27 A
|
34 A
|
Drain-source On Resistance-Max |
0.081 Ω
|
0.081 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code |
R-CBCC-N3
|
R-XBCC-N3
|
JESD-609 Code |
e4
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
UNSPECIFIED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
108 A
|
136 A
|
Qualification Status |
Not Qualified
|
Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
GOLD
|
TIN LEAD
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Part Package Code |
|
TO-276AB
|
Pin Count |
|
3
|
Additional Feature |
|
HIGH RELIABILITY
|
JEDEC-95 Code |
|
TO-276AB
|
Reference Standard |
|
MIL-19500/592
|
Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFN150SMDR4 with alternatives
Compare JANTXV2N7224U with alternatives