IRFN150SMD
vs
IRFN150
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
TT ELECTRONICS PLC
INFINEON TECHNOLOGIES AG
Package Description
CHIP CARRIER, R-CBCC-N3
CHIP CARRIER, R-CBCC-N3
Reach Compliance Code
compliant
not_compliant
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
150 mJ
150 mJ
Case Connection
DRAIN
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
27 A
34 A
Drain-source On Resistance-Max
0.081 Ω
0.081 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-CBCC-N3
R-CBCC-N3
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
CHIP CARRIER
CHIP CARRIER
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Pulsed Drain Current-Max (IDM)
108 A
136 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
YES
YES
Terminal Form
NO LEAD
NO LEAD
Terminal Position
BOTTOM
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
4
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
JESD-609 Code
e0
Power Dissipation-Max (Abs)
100 W
Reference Standard
MIL-19500/592
Terminal Finish
Tin/Lead (Sn/Pb)
Transistor Application
SWITCHING
Compare IRFN150SMD with alternatives
Compare IRFN150 with alternatives