IRFN140R4
vs
IRFN140PBF
feature comparison
Pbfree Code |
Yes
|
Yes
|
Rohs Code |
Yes
|
Yes
|
Part Life Cycle Code |
Active
|
Transferred
|
Ihs Manufacturer |
SEMELAB LTD
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code |
TO-276AB
|
|
Package Description |
CHIP CARRIER, R-XBCC-N3
|
CHIP CARRIER, R-CBCC-N3
|
Pin Count |
3
|
3
|
Reach Compliance Code |
compliant
|
compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
250 mJ
|
250 mJ
|
Case Connection |
DRAIN
|
ISOLATED
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
28 A
|
28 A
|
Drain-source On Resistance-Max |
0.125 Ω
|
0.125 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-276AB
|
|
JESD-30 Code |
R-XBCC-N3
|
R-CBCC-N3
|
JESD-609 Code |
e4
|
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
UNSPECIFIED
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
RECTANGULAR
|
RECTANGULAR
|
Package Style |
CHIP CARRIER
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
112 A
|
112 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
YES
|
YES
|
Terminal Finish |
GOLD
|
|
Terminal Form |
NO LEAD
|
NO LEAD
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
2
|
2
|
HTS Code |
|
8541.29.00.95
|
Additional Feature |
|
HIGH RELIABILITY
|
Peak Reflow Temperature (Cel) |
|
260
|
Power Dissipation Ambient-Max |
|
125 W
|
Time@Peak Reflow Temperature-Max (s) |
|
40
|
Turn-off Time-Max (toff) |
|
169 ns
|
Turn-on Time-Max (ton) |
|
166 ns
|
|
|
|
Compare IRFN140R4 with alternatives
Compare IRFN140PBF with alternatives