Findchips: Compare IRFM440PBF vs OM6020SAT

IRFM440PBF vs OM6020SAT feature comparison

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Pbfree Code	Yes
Rohs Code	Yes	No
Part Life Cycle Code	Transferred	Active
Ihs Manufacturer	INTERNATIONAL RECTIFIER CORP	INFINEON TECHNOLOGIES AG
Package Description	FLANGE MOUNT, S-MSFM-P3	FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code	compliant	compliant
ECCN Code	EAR99	EAR99
HTS Code	8541.29.00.95
Additional Feature	HIGH RELIABILITY	HIGH RELIABILITY
Avalanche Energy Rating (Eas)	700 mJ
Case Connection	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	500 V	500 V
Drain Current-Max (ID)	8 A	11 A
Drain-source On Resistance-Max	0.95 Ω	0.42 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-254AA	TO-254AA
JESD-30 Code	S-MSFM-P3	S-MSFM-P3
Number of Elements	1	1
Number of Terminals	3	3
Operating Mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Operating Temperature-Max	150 °C
Package Body Material	METAL	METAL
Package Shape	SQUARE	SQUARE
Package Style	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	N-CHANNEL	N-CHANNEL
Power Dissipation Ambient-Max	125 W
Pulsed Drain Current-Max (IDM)	32 A	40 A
Qualification Status	Not Qualified	Not Qualified
Surface Mount	NO	NO
Terminal Form	PIN/PEG	PIN/PEG
Terminal Position	SINGLE	SINGLE
Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING	SWITCHING
Transistor Element Material	SILICON	SILICON
Turn-off Time-Max (toff)	123 ns
Turn-on Time-Max (ton)	94 ns
Base Number Matches	2	3
JESD-609 Code		e0
Terminal Finish		TIN LEAD
	Transistors » Power Field-Effect Transistors	Transistors » Power Field-Effect Transistors