IRFM150
vs
IRFN140-JQR-B
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
SEMELAB LTD
Package Description
FLANGE MOUNT, R-MSFM-P3
CHIP CARRIER, R-XBCC-N3
Reach Compliance Code
not_compliant
compliant
ECCN Code
EAR99
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
150 mJ
250 mJ
Case Connection
ISOLATED
DRAIN
Configuration
SINGLE
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
34 A
28 A
Drain-source On Resistance-Max
0.07 Ω
0.125 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-254AA
TO-276AB
JESD-30 Code
R-MSFM-P3
R-XBCC-N3
JESD-609 Code
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
METAL
UNSPECIFIED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
CHIP CARRIER
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
150 W
Pulsed Drain Current-Max (IDM)
136 A
112 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
PIN/PEG
NO LEAD
Terminal Position
SINGLE
BOTTOM
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
6
2
Pbfree Code
Part Package Code
TO-276AB
Pin Count
3
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Compare IRFM150 with alternatives
Compare IRFN140-JQR-B with alternatives