IRFM140R1
vs
IRFN150
feature comparison
Pbfree Code |
Yes
|
|
Rohs Code |
Yes
|
No
|
Part Life Cycle Code |
Active
|
Active
|
Ihs Manufacturer |
SEMELAB LTD
|
INFINEON TECHNOLOGIES AG
|
Part Package Code |
TO-254AA
|
|
Package Description |
FLANGE MOUNT, S-MSFM-T3
|
CHIP CARRIER, R-CBCC-N3
|
Pin Count |
3
|
|
Reach Compliance Code |
compliant
|
not_compliant
|
ECCN Code |
EAR99
|
EAR99
|
Avalanche Energy Rating (Eas) |
250 mJ
|
150 mJ
|
Case Connection |
ISOLATED
|
DRAIN
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
100 V
|
100 V
|
Drain Current-Max (ID) |
28 A
|
34 A
|
Drain-source On Resistance-Max |
0.125 Ω
|
0.081 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-254AA
|
|
JESD-30 Code |
S-MSFM-T3
|
R-CBCC-N3
|
JESD-609 Code |
e1
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
150 °C
|
Package Body Material |
METAL
|
CERAMIC, METAL-SEALED COFIRED
|
Package Shape |
SQUARE
|
RECTANGULAR
|
Package Style |
FLANGE MOUNT
|
CHIP CARRIER
|
Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
Pulsed Drain Current-Max (IDM) |
112 A
|
136 A
|
Qualification Status |
Not Qualified
|
Not Qualified
|
Surface Mount |
NO
|
YES
|
Terminal Finish |
TIN SILVER COPPER
|
Tin/Lead (Sn/Pb)
|
Terminal Form |
THROUGH-HOLE
|
NO LEAD
|
Terminal Position |
SINGLE
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
2
|
Samacsys Manufacturer |
|
Infineon
|
Additional Feature |
|
HIGH RELIABILITY
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Power Dissipation-Max (Abs) |
|
100 W
|
Reference Standard |
|
MIL-19500/592
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRFM140R1 with alternatives
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