IRFL4105TRPBF vs PHT8N06LT,135 feature comparison

IRFL4105TRPBF International Rectifier

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PHT8N06LT,135 NXP Semiconductors

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Transferred Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP NXP SEMICONDUCTORS
Package Description SOT-223, 3 PIN PLASTIC, SOT-223, 4 PIN
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.95 8541.29.00.75
Case Connection DRAIN DRAIN
Configuration SINGLE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V 55 V
Drain Current-Max (ID) 3.7 A 2.2 A
Drain-source On Resistance-Max 0.045 Ω 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 4 4
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation Ambient-Max 2.1 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) TIN
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Part Package Code SC-73
Pin Count 4
Manufacturer Package Code SOT223
Additional Feature LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Avalanche Energy Rating (Eas) 30 mJ
Power Dissipation-Max (Abs) 1.8 W
Pulsed Drain Current-Max (IDM) 40 A
Transistor Application SWITCHING

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Compare PHT8N06LT,135 with alternatives