IRFG9110
vs
JANTXV2N7335
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Active
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
INFINEON TECHNOLOGIES AG
Package Description
IN-LINE, R-CDIP-T14
MO-036AB, 14 PIN
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Additional Feature
HIGH RELIABILITY
HIGH RELIABILITY
Avalanche Energy Rating (Eas)
75 mJ
75 mJ
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
100 V
Drain Current-Max (ID)
0.75 A
0.75 A
Drain-source On Resistance-Max
1.73 Ω
1.73 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MO-036AB
MO-036AB
JESD-30 Code
R-CDIP-T14
R-CDIP-T14
JESD-609 Code
e0
e0
Number of Elements
4
4
Number of Terminals
14
14
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
CERAMIC, METAL-SEALED COFIRED
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
IN-LINE
IN-LINE
Polarity/Channel Type
P-CHANNEL
P-CHANNEL
Power Dissipation-Max (Abs)
1.4 W
1.4 W
Pulsed Drain Current-Max (IDM)
3 A
3 A
Qualification Status
Not Qualified
Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
DUAL
DUAL
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Samacsys Manufacturer
Infineon
Samacsys Modified On
2020-11-30 19:47:12
Category CO2 Kg
8.8
Conflict Mineral Status
DRC Conflict Free
Conflict Mineral Status Source
CMRT V6.22
Qualifications
DLA
Reference Standard
MIL-19500/599
Compare IRFG9110 with alternatives
Compare JANTXV2N7335 with alternatives