IRFG6110-JQR-B
vs
JANTXV2N7336
feature comparison
| Pbfree Code |
No
|
|
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Active
|
Active
|
| Ihs Manufacturer |
SEMELAB LTD
|
INFINEON TECHNOLOGIES AG
|
| Part Package Code |
DIP
|
|
| Package Description |
IN-LINE, R-CDIP-T14
|
MO-036AB, 14 PIN
|
| Pin Count |
14
|
|
| Reach Compliance Code |
compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| Additional Feature |
AVALANCHE RATED
|
HIGH RELIABILITY
|
| Avalanche Energy Rating (Eas) |
75 mJ
|
75 mJ
|
| Configuration |
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
|
| DS Breakdown Voltage-Min |
100 V
|
100 V
|
| Drain Current-Max (ID) |
1 A
|
1 A
|
| Drain-source On Resistance-Max |
0.8 Ω
|
0.8 Ω
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-30 Code |
R-CDIP-T14
|
R-CDIP-T14
|
| Number of Elements |
4
|
4
|
| Number of Terminals |
14
|
14
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Package Body Material |
CERAMIC, METAL-SEALED COFIRED
|
CERAMIC, METAL-SEALED COFIRED
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
IN-LINE
|
IN-LINE
|
| Peak Reflow Temperature (Cel) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL AND P-CHANNEL
|
N-CHANNEL AND P-CHANNEL
|
| Pulsed Drain Current-Max (IDM) |
4 A
|
4 A
|
| Qualification Status |
Not Qualified
|
Qualified
|
| Surface Mount |
NO
|
NO
|
| Terminal Form |
THROUGH-HOLE
|
THROUGH-HOLE
|
| Terminal Position |
DUAL
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
NOT SPECIFIED
|
NOT SPECIFIED
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Base Number Matches |
2
|
1
|
| JEDEC-95 Code |
|
MO-036AB
|
| JESD-609 Code |
|
e0
|
| Operating Temperature-Max |
|
150 °C
|
| Power Dissipation-Max (Abs) |
|
1.4 W
|
| Reference Standard |
|
MIL-19500/598
|
| Terminal Finish |
|
Tin/Lead (Sn/Pb)
|
| Transistor Application |
|
SWITCHING
|
|
|
|
Compare IRFG6110-JQR-B with alternatives
Compare JANTXV2N7336 with alternatives