IRFF9220
vs
IRFF9220
feature comparison
Rohs Code |
No
|
No
|
Part Life Cycle Code |
Transferred
|
Active
|
Ihs Manufacturer |
INTERSIL CORP
|
ROCHESTER ELECTRONICS LLC
|
Reach Compliance Code |
not_compliant
|
unknown
|
ECCN Code |
EAR99
|
|
Avalanche Energy Rating (Eas) |
290 mJ
|
180 mJ
|
Case Connection |
DRAIN
|
|
Configuration |
SINGLE WITH BUILT-IN DIODE
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min |
200 V
|
200 V
|
Drain Current-Max (ID) |
2.5 A
|
2.5 A
|
Drain-source On Resistance-Max |
1.5 Ω
|
1.725 Ω
|
FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code |
TO-205AF
|
TO-205AF
|
JESD-30 Code |
O-MBCY-W3
|
O-MBCY-W3
|
JESD-609 Code |
e0
|
e0
|
Number of Elements |
1
|
1
|
Number of Terminals |
3
|
3
|
Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
Operating Temperature-Max |
150 °C
|
|
Package Body Material |
METAL
|
METAL
|
Package Shape |
ROUND
|
ROUND
|
Package Style |
CYLINDRICAL
|
CYLINDRICAL
|
Polarity/Channel Type |
P-CHANNEL
|
P-CHANNEL
|
Power Dissipation-Max (Abs) |
20 W
|
|
Pulsed Drain Current-Max (IDM) |
10 A
|
10 A
|
Qualification Status |
Not Qualified
|
COMMERCIAL
|
Surface Mount |
NO
|
NO
|
Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
Terminal Form |
WIRE
|
WIRE
|
Terminal Position |
BOTTOM
|
BOTTOM
|
Transistor Application |
SWITCHING
|
SWITCHING
|
Transistor Element Material |
SILICON
|
SILICON
|
Base Number Matches |
1
|
1
|
Pbfree Code |
|
No
|
Part Package Code |
|
BCY
|
Package Description |
|
HERMETIC SEALED, TO-39, 3 PIN
|
Pin Count |
|
2
|
Moisture Sensitivity Level |
|
NOT SPECIFIED
|
Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
|
|
|
Compare IRFF9220 with alternatives
Compare IRFF9220 with alternatives